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1

Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks

Flachowsky, S., Herrmann, T., Höntschel, J., Illgen, R., Ong, S.Y., Wiatr, M.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.98 MB

english, 2013

2

Simulation of quantum transport in monolithic ICs based on In0.53Ga0.47As-In0.52Al0.48As RTDs and HEMTs with a quantum hydrodynamic transport model

Hontschel, J., Stenzel, R., Klix, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 397 KB

english, 2004

3

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Study of 22/20nm Tri-Gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process

Baldauf, T., Wei, A., Illgen, R., Flachowsky, S., Herrmann, T., Hontschel, J., Horstmann, M., Klix, W., Stenzel, R.

Year:

2011

Language:

english

File:

PDF, 602 KB

english, 2011

4

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - Simulation and optimization of Tri-Gates in a 22 nm hybrid Tri-Gate/planar process

Baldauf, T., Wei, A., Illgen, R., Flachowsky, S., Herrmann, T., Feudel, T., Hontschel, J., Horstmann, M., Klix, W., Stenzel, R.

Year:

2011

Language:

english

File:

PDF, 199 KB

english, 2011

5

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Mobility and strain effects for and oriented silicon and SiGe transistor channels

Flachowsky, S., Herrmann, T., Hontschel, J., Illgen, R., Ong, Shiang Yang, Wiatr, M., Baldauf, T., Klix, W., Stenzel, R.

Year:

2012

File:

PDF, 360 KB

2012

6

[IEEE 2011 Semiconductor Conference Dresden (SCD) - Dresden, Germany (2011.09.27-2011.09.28)] 2011 Semiconductor Conference Dresden - Suppression of the corner effects in a 22 nm hybrid Tri-Gate/planar process

Baldauf, T., Wei, A., Herrmann, T., Flachowsky, S., Illgen, R., Hontschel, J., Horstmann, M., Klix, W., Stenzel, R.

Year:

2011

Language:

english

File:

PDF, 1.04 MB

english, 2011

7

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Scalability of advanced partially depleted n-MOSFET devices on biaxial strained SOI substrates

Flachowsky, S., Hontschel, J., Wei, A., Illgen, R., Hermann, P., Herrmann, T., Klix, W., Stenzel, R., Ramirez, A., Horstmann, M., Kernevez, N., Cayrefourcq, I., Metral, F., Kennard, M., Guiot, E.

Year:

2009

Language:

english

File:

PDF, 886 KB

english, 2009

8

[IEEE IEEE International Symposium on Compound Semiconductors - San Diego, CA, USA (25-27 Aug. 2003)] 2003 International Symposium on Compound Semiconductors - Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs by simulations with a quantum hydrodynamic transport model

Hontschel, J., Klix, W., Stenzel, R.

Year:

2003

Language:

english

File:

PDF, 123 KB

english, 2003

9

[IEEE 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings - San Diego, CA, USA (25-27 Aug. 2003)] 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) - Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs with a quantum hydrodynamic transport model

Hontschel, J., Klix, W., Stenzel, R.

Year:

2004

Language:

english

File:

PDF, 190 KB

english, 2004

10

Improving Accuracy and Precision of Strain Analysis by Energy-Filtered Nanobeam Electron Diffraction

Hähnel, Angelika, Reiche, Manfred, Moutanabbir, Oussama, Blumtritt, Horst, Geisler, Holm, Höntschel, Jan, Engelmann, Hans-Jürgen

Journal:

Microscopy and Microanalysis

Year:

2012

Language:

english

File:

PDF, 746 KB

english, 2012

11

Characterization of nanotransistors in a semiempirical model

Wulf, U., Kučera, J., Richter, H., Wiatr, M., Höntschel, J.

Journal:

Thin Solid Films

Year:

2015

Language:

english

File:

PDF, 1.34 MB

english, 2015

12

Thermal properties of quantum devices in integrated circuits embedded in a chip environment

Käso, M., Wulf, U., Kuˇcera, J., Richter, H., Höntschel, J.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 171 KB

english, 2014

13

Analytical expressions for the drain current of a nanotransistor in the off-state regime

Krahlisch, M., Wulf, U., Kučera, J., Richter, H., Höntschel, J.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 198 KB

english, 2014

14

Channel Engineering for Nanotransistors in a Semiempirical Quantum Transport Model

Wulf, Ulrich, Kučera, Jan, Richter, Hans, Horstmann, Manfred, Wiatr, Maciej, Höntschel, Jan

Journal:

Year:

2017

Language:

english

File:

PDF, 358 KB

english, 2017

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